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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTC9015A EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.). Low Noise :NF=1dB(Typ.) at f=1kHz. Complementary to KTC9014A. K D G N E A Excellent hFE Linearity MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -50 -50 -5 -150 150 400 150 -55 150 UNIT V L F H F V V mA mA mW M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification A:60 150, B:100 SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF 300, ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA, Rg=10k C:200 600 , f=1kHz MIN. 60 60 TYP. -0.1 4.0 1.0 MAX. -50 -100 600 -0.3 7.0 10 V MHz pF dB UNIT nA nA 2010. 1. 28 Revision No : 2 1/1 |
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